Review on the Properties and Comprehensive Application Development of Novel Semiconductor Materials based on GaN, InP, and GaAs

Pengxi Liu

doi:10.54691/8z5v7826

Authors

Pengxi Liu School of Information Science and Engineering, Hohai University, Changzhou, 213200, China

DOI:

https://doi.org/10.54691/8z5v7826

Keywords:

Gallium Arsenide; Indium Phosphide; Gallium Nitride; New Compound Semiconductors; Heterogeneous Integration; Power Devices.

Abstract

With the rapid development of 5G/6G communications, data centers, new energy vehicles, autonomous driving, and high-performance optoelectronic systems, traditional silicon-based semiconductors are gradually approaching their performance limits in application scenarios such as high frequency, high power, high temperature, and high-speed photoelectric conversion. Compound semiconductor materials have become key enablers for new-generation devices. Gallium arsenide (GaAs) and indium phosphide (InP) offer high electron mobility and excellent optoelectronic properties for high-frequency communication and photonic applications. Gallium nitride (GaN), distinguished by its wide bandgap and high breakdown field strength, further extends these capabilities to high-power electronics and ultraviolet optoelectronics.This paper focuses on three typical compound semiconductor materials, GaAs, InP, and GaN, and reviews their material properties, current technological development status, and main application directions. It emphatically analyzes the application progress of GaAs and InP in radio frequency (RF) front-ends, microwave and millimeter-wave multifunctional integrated circuits, optical communications, and optoelectronic devices, discusses the development potential of InP/CMOS heterogeneous integration in high-frequency communications above 100 GHz, radar detection, and optoelectronic integration, and outlines the application prospects of GaN in vertical power devices, driver integrated circuits, new energy vehicles, and 6G communications. Finally, it analyzes the challenges faced by compound semiconductors in large-size substrate preparation, process compatibility, device reliability, manufacturing costs, and large-scale applications, and prospects their future development trends toward multi-material collaboration, heterogeneous integration, and system-level integration.

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