From Source Control to Path Collaboration: A Review of Development Trends in Thermal Management Technologies for High-Power Electronic Devices

Boxuan Xin

doi:10.54691/7xty3h91

Authors

Boxuan Xin (Lingshou Campus),Hebei Institute of Engineering and Technology, Shijiazhuang, Hebei 050500, China

DOI:

https://doi.org/10.54691/7xty3h91

Keywords:

High-power Electronic Devices; Thermal Management; Wide Bandgap Semiconductors; Gallium Oxide; Cooling Technologies.

Abstract

The heat flux density of high-power electronic devices continues to rise, and the thermal dissipation bottleneck has become a key factor limiting the performance of wide and ultra-wide bandgap semiconductors.From a full-chain thermal management perspective of "from source to path," this paper systematically reviews the evolution trajectory of source-level thermal resistance control during chip manufacturing and thermal path collaborative management after chip operation.The review indicates that thermal management concepts are undergoing a triple paradigm shift: from post-hoc cooling to source-level control, from single-method optimization to full-chain collaboration, and from fixed-mode operation to intelligent adaptive cooling.Recent breakthroughs have been achieved in areas such as thermal interface resistance control of β-Ga₂O₃/diamond heterojunctions, although shortcomings remain in high-performance thermal interface materials and wafer bonding equipment.This paper can serve as a reference for the selection of thermal management solutions for high-power-density packaging and the planning of technology roadmaps.

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