A Review of Low-Power Circuit Design for the Internet of Things based on CMOS

Authors

  • Jingchao Sun School of Physics, Changchun University of Science and Technology, Changchun, Jilin, 130022, China

DOI:

https://doi.org/10.54691/71pd5276

Keywords:

Internet of Things; Low Power; CMOS.

Abstract

With the deployment of IoT nodes reaching the hundreds of billions, power consumption has become a key bottleneck limiting the operational lifespan and size of battery-powered and environmental energy harvesting nodes. Consequently, the design of ultra-low-power circuits operating at the nW–pW level using CMOS processes has emerged as a central issue in this field.This paper, themed ‘CMOS-based Low-Power Circuit Design for the Internet of Things’, systematically reviews and analyses 45 representative publications from 2012 to 2026, providing a comprehensive overview across various module dimensions including voltage and current reference sources, RF front-ends, power amplifiers, transceiver systems, digital and security circuits, and power management and energy harvesting.Analysis indicates that through technological innovations such as all-CMOS sub-threshold references, inductorless RF topologies, adiabatic logic, and adaptive duty-cycle power management, the power consumption of each module has steadily decreased from the early milliwatt range to the nW and even pW levels; advanced process nodes have extended from 0.18 μm to 7 nm FinFET, further enhancing energy efficiency and integration.However, existing research has largely focused on the performance limits of individual modules, lacking collaborative design verification that integrates the reference, front-end, power management and digital control into a complete system; furthermore, robustness data under process variations, electromagnetic interference and long-term ageing conditions remains relatively scarce.This review highlights that future research must seek an optimal trade-off between power consumption, performance and reliability in single-chip system integration, providing a reference for the fully integrated ultra-low-power design of passive and semi-passive IoT nodes.

Downloads

Download data is not yet available.

References

[1] Pallavi, R., Nayana, D. K., & Sudharshan, K. M. (2026). A low‑power, high‑stability CMOS bandgap reference with post‑regulation for wearable IoT applications. Results in Engineering, 30.

[2] Yang, J. (2023). Research and design of a full‑CMOS voltage reference circuit for passive IoT nodes [Unpublished master's thesis]. Guangzhou University. [In Chinese.]

[3] Sun, X. (2023). Design of a process‑compensated low‑voltage low‑power CMOS bandgap voltage reference [Unpublished master's thesis]. University of Science and Technology of China. [In Chinese.]

[4] Zhou, S., & Chen, X. (2019). A pico‑ampere CMOS voltage reference for IoT chips. Application of Electronic Technique, 45(11), 42–46. [In Chinese.]

[5] Chouhan, S. S., & Halonen, K. (2017). A 139 nW, 67 ppm/°C BJT‑CMOS‑based voltage reference circuit. Circuits, Systems, and Signal Processing, 36(12).

[6] Gagliardi, F., Ria, A., Piotto, M., & Bruschi, P. (2025). A CMOS current reference with novel temperature compensation based on geometry‑dependent threshold voltage effects. Electronics, 14(13).

[7] Fassio, L., Lin, L., De Rose, R., et al. (2021). A 0.6‑to‑1.8 V CMOS current reference with near‑100% power utilization. IEEE Transactions on Circuits and Systems II: Express Briefs, 68(9).

[8] Tiwari, S., & Mukherjee, J. (2021). An inductorless wideband Gm‑boosted balun LNA with nMOS‑pMOS configuration and capacitively coupled loads for sub‑GHz IoT applications. IEEE Transactions on Circuits and Systems II: Express Briefs, 68(10).

[9] Nejadhasan, S., Zaheri, F., Abiri, E., & Salehi, M. R. (2020). PVT‑compensated low‑voltage and low‑power CMOS LNA for IoT applications. International Journal of RF and Microwave Computer‑Aided Engineering, 30(11).

[10] Cai, L. (2023). Research on key technologies of self‑powered low‑power CMOS receivers for the Internet of Things [Unpublished master's thesis]. Zhejiang University. [In Chinese.]

[11] Mao, F. (2015). Design of a 780 MHz CMOS low‑power high‑efficiency RF module for IoT wireless transmission nodes [Unpublished master's thesis]. University of Electronic Science and Technology of China. [In Chinese.]

[12] Dong, Y. (2013). Research and design of a low‑noise amplifier for RF front‑end of IoT and wireless sensor networks [Unpublished master's thesis]. National Ocean Technology Center. [In Chinese.]

[13] Tedjini, S. A., Slimane, A., Ghorbel, I., et al. (2019). Sub‑mW cognitive CMOS frequency down‑converter for Internet of Things. IET Microwaves, Antennas & Propagation, 13(12).

[14] Zhou, Y. (2019). Design of a down‑converter and quadrature output voltage‑controlled oscillator for IoT applications [Unpublished master's thesis]. Soochow University. [In Chinese.]

[15] Gong, Y. (2019). Research on silicon‑based power amplifier and low‑power mixer [Unpublished master's thesis]. University of Electronic Science and Technology of China. [In Chinese.]

[16] Meng, F., Liu, H., Wang, M., et al. (2017). Design of a CMOS low‑power undersampling filter for IoT. Journal of Xidian University, 44(3), 108–113. [In Chinese.]

[17] Purushothaman, V. K., Klumperink, E. A. M., Clavera, B. T., & Nauta, B. (2019). A fully passive RF front end with 13‑dB gain exploiting implicit capacitive stacking in a bottom‑plate N‑path filter/mixer. IEEE Journal of Solid‑State Circuits, 55(5).

[18] Zhang, Y., Liu, B., Someya, T., et al. (2022). A 0.37 mm² fully‑integrated wide dynamic range sub‑GHz receiver front‑end without off‑chip matching components. IEICE Transactions on Electronics, E105C(7).

[19] Qian, Y., Meng, H., Peng, F., et al. (2018). Low‑power RF front‑end for NB‑IoT based on CMOS technology [Technical report]. Beijing Zhongke Hantianxia Electronic Technology Co., Ltd. [In Chinese.]

[20] Zhao, K. (2021). Design of a 2.4 GHz low‑power power amplifier for the Internet of Things. Application of IC, 38(12), 10–12. [In Chinese.]

[21] Cui, J., Zhang, K., & Tian, T. (2013). Design of a dual‑band RF class‑D power amplifier for the Internet of Things. Microelectronics & Computer, 30(12), 129–132. [In Chinese.]

[22] Nishio, Y., Kobayashi, A., & Niitsu, K. (2020). Low‑power inductive‑coupling transmitter using supply‑insensitive auxiliary driving switch under supply‑voltage fluctuation. Sensors and Materials, 32(8).

[23] Xu, G., Hayashi, K., Arata, S., et al. (2020). Design and theoretical analysis of bit error rate (BER)‑modulated inductive‑coupling transceiver using dynamic intermediate interference control technique for low‑power communication. Sensors and Materials, 32(8).

[24] Kim, N. S. (2025). A low‑power complementary metal‑oxide‑semiconductor receiver with quadrature bandpass continuous‑time delta–sigma analog‑to‑digital converter for IoT applications. Sensors, 25(6).

[25] Meng, F. (2013). Design of a 780 MHz CMOS ultra‑low power receiver for IoT wireless nodes [Unpublished master's thesis]. University of Electronic Science and Technology of China. [In Chinese.]

[26] Qiu, W. (2019). Design of CMOS ultra‑low power RF front‑end system for IoT applications [Unpublished master's thesis]. Shenzhen University. [In Chinese.]

[27] Zhang, K. (2012). Design of an RF SoC for the Internet of Things [Unpublished master's thesis]. Beijing Jiaotong University. [In Chinese.]

[28] Haddad, F., Ghorbel, I., & Rahajandraibe, W. (2019). Design of reconfigurable inductorless RF VCO in 130 nm CMOS. BioNanoScience, 9(2).

[29] Niranjan, V., & Jhamb, M. (2023). Design of a low‑power 180 nm broadband CMOS transimpedance amplifier for bio‑medical & IoT applications. International Journal of Information Technology, 15(5).

[30] Juveria, S. H., Shashank, R., Panigrahy, A. K., & Ajayan, J. (2025). Thermal dynamics of 7‑nm FinFET process‑based negative edge triggered (NET) TSPC D flip‑flop for future AI and IoT applications. Journal of the Korean Physical Society, 88(3).

[31] Juveria, S. H., Shashank, R., Ajayan, J., et al. (2025). A review of performance and reliability issues in D flip‑flops for future artificial intelligence and Internet of Things applications. IET Circuits, Devices & Systems, 2025(1).

[32] Liu, J., & Takahashi, Y. (2025). Design and simulation of low‑power adiabatic PUF circuit. Electronics, 14(22).

[33] Monteiro, C., & Takahashi, Y. (2021). Low‑power two‑phase clocking adiabatic PUF circuit. Electronics, 10(11).

[34] Nishio, Y., Kobayashi, A., & Niitsu, K. (2019). Design and calibration of a small‑footprint, low‑frequency, and low‑power gate leakage timer using differential leakage technique. IEICE Transactions on Electronics, E102.C(4).

[35] Hu, J., Xie, L., Zou, W., et al. (2019). Design of a miniature image acquisition system based on low‑power SoC. Journal of Hunan University (Natural Sciences), 46(2), 86–91. [In Chinese.]

[36] Gu, T. (2019). Research on low‑power optimization technology for Internet of Things [Unpublished master's thesis]. Beijing University of Posts and Telecommunications. [In Chinese.]

[37] Wang, K. (2023). Design of low‑power light‑sensing IoT node chip based on CMOS process [Unpublished master's thesis]. Xidian University. [In Chinese.]

[38] Chen, J. (2019). Research and implementation of key technologies for ultra‑low power on‑chip power management for self‑powered IoT nodes [Unpublished master's thesis]. Zhejiang University. [In Chinese.]

[39] Zhang, J. (2023). Design and implementation of an ultra‑low power analog front‑end for passive IoT nodes [Unpublished master's thesis]. Xidian University. [In Chinese.]

Downloads

Published

2026-08-26

Issue

Section

Articles

How to Cite

Sun, Jingchao. 2026. “A Review of Low-Power Circuit Design for the Internet of Things Based on CMOS”. Scientific Journal of Intelligent Systems Research 8 (8): 34-43. https://doi.org/10.54691/71pd5276.