Reconfigurable Topological Transport of Dual-frequency Elastic Waves in Solid Phononic Crystals

Jiangxing Xiong

doi:10.6919/ICJE.202505_11(5).0022

Authors

Jiangxing Xiong

DOI:

https://doi.org/10.6919/ICJE.202505_11(5).0022

Keywords:

Elastic Wave; Topological Insulator; Valley-Selective Excitation; Topological Edge States.

Abstract

Elastic wave topological materials have attracted much attention due to the conservation of their topological properties, which can accurately guide and control the propagation path of elastic waves. Aiming at the limitations of traditional single-frequency topological materials for multi-scenario applications, this paper proposes a dual-frequency topological phononic crystal, which realizes the synergistic effect of negative refraction at low frequencies (8.6-14.6 kHz) and zero refraction at high frequencies (32-36 kHz) through symmetry breaking modulation. The design of supercell hetero structure based on Valley Chen number inversion, combined with Berry curvature analysis, confirms that the dual-frequency topological boundary states are excited by the body-edge correspondence principle. Numerical simulations show that the elastic waves in defective or curved paths maintain very high transmission efficiency, low backscattering loss, and exhibit strong robustness; the incidence angle modulation experiments further validate the topological locking property of zero refraction. The dual-frequency topological refraction mechanism provides a new idea for multi-frequency acoustic communication, integrated acoustic chip and adaptive acoustic field regulation.

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References

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