SnSe Thin Films Were Prepared by Electron Beam Deposition Technique
DOI:
https://doi.org/10.6911/WSRJ.202503_11(3).0006Keywords:
SnSe Thin Films; Electron Beam Deposition; Optical Property.Abstract
Tin selenide (SnSe) is a typical two-dimensional (2D) semiconductor material, which has attracted extensive attention in the field of new optoelectronics due to its excellent electrical and optical properties.In this paper, tin selenide (SnSe) thin films were successfully prepared on soda-lime glass substrates by electron beam deposition technology, and related tests were carried out using characterization equipment. The effects of different temperatures (25℃, 100℃, 150℃, 200℃, 250℃) on the phase and composition, surface morphology, transmittance and absorption rate of the obtained films were studied by temperature treatment. The results show that the peak intensity of SnSe decreases with the increase of temperature, and the peaks of SnSe2 and SnO2 appear at the same time. In addition, SnO was initially formed and gradually transformed into SnO2 at 200℃, and the intensity of the SnO peak completely disappeared at 250℃. The absorptivity of SnSe thin films decreases with the increase of temperature, and the maximum absorptivity (about 1.4) is obtained in the visible light range. The absorptivity of the five groups of thin film samples is below 1.2 in the range of 900-1400nm. The transmittance of the film increases with the increase of temperature, and has a high transmittance in the near-infrared region. The transmittance of all samples in the visible light band remains below 25%.
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